2SC5566-TD-E Transistor Datasheet & Specifications

NPN BJT | onsemi

NPNSOT-89General Purpose
VCEO
50V
Ic Max
4A
Pd Max
3.5W
Gain
200

Quick Reference

The 2SC5566-TD-E is a NPN bipolar transistor in a SOT-89 package. This datasheet provides complete specifications including 50V breakdown voltage and 4A continuous collector current. Download the 2SC5566-TD-E datasheet PDF below for detailed pinout diagrams and application circuits.

Technical Specifications

ParameterValueDescription
ManufactureronsemiOriginal Manufacturer
PackageSOT-89Physical mounting
VCEO50VBreakdown voltage
IC Max4ACollector current
Pd Max3.5WPower dissipation
Gain200DC current gain
Frequency400MHzTransition speed
VCEsat105mVSaturation voltage
Vebo6VEmitter-Base voltage
Temp-55โ„ƒ~+150โ„ƒOperating temp

Direct Replacements & Alternatives

PartTypePackageVCEOIcPd
ZXTN2010ZTANPNSOT-8960V5A2.1W
ZXTN19055DZTANPNSOT-8955V6A2.1W
FCX690BTANPNSOT-8945V2A2W
2SC5824T100RNPNSOT-8960V3A2W
2STF1360NPNSOT-8960V3A1.4W
DXT3904-13NPNSOT-8940V200mA1.2W
DXT2222A-13NPNSOT-8940V600mA1.2W
FCX491ATANPNSOT-8940V1A1W
BCX55-16NPNSOT-8960V1A1.3W