2SC3325-Y(TE85L,F) Transistor Datasheet & Specifications

NPN BJT | TOSHIBA

NPNTO-236General Purpose
VCEO
50V
Ic Max
500mA
Pd Max
200mW
Gain
25

Quick Reference

The 2SC3325-Y(TE85L,F) is a NPN bipolar transistor in a TO-236 package. This datasheet provides complete specifications including 50V breakdown voltage and 500mA continuous collector current. Download the 2SC3325-Y(TE85L,F) datasheet PDF below for detailed pinout diagrams and application circuits.

Technical Specifications

ParameterValueDescription
ManufacturerTOSHIBAOriginal Manufacturer
PackageTO-236Physical mounting
VCEO50VBreakdown voltage
IC Max500mACollector current
Pd Max200mWPower dissipation
Gain25DC current gain
Frequency300MHzTransition speed
VCEsat250mVSaturation voltage
Vebo5VEmitter-Base voltage
Temp-55โ„ƒ~+150โ„ƒOperating temp

Direct Replacements & Alternatives

PartTypePackageVCEOIcPd
MMBT3904(1AM)NPNTO-23640V200mA350mW
MMBT9014CNPNTO-23645V100mA200mW