2SB863 Transistor Datasheet & Specifications
PNPTO-3PIGeneral Purpose
VCEO
140V
Ic Max
10A
Pd Max
100W
Gain
160
Quick Reference
The 2SB863 is a PNP bipolar transistor in a TO-3PI package. This datasheet provides complete specifications including 140V breakdown voltage and 10A continuous collector current. Download the 2SB863 datasheet PDF below for detailed pinout diagrams and application circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | SPTECH | Original Manufacturer |
| Package | TO-3PI | Physical mounting |
| VCEO | 140V | Breakdown voltage |
| IC Max | 10A | Collector current |
| Pd Max | 100W | Power dissipation |
| Gain | 160 | DC current gain |
| Frequency | 15MHz | Transition speed |
| VCEsat | 2V | Saturation voltage |
| Vebo | 5V | Emitter-Base voltage |
| Temp | - | Operating temp |