2SB647A Datasheet & Equivalents
PNP
TO-92L
General Purpose
JSMSEMI
VCEO
80V
Ic Max
1A
Pd Max
750mW
hFE Gain
320
Quick Reference
The 2SB647A is a PNP bipolar junction transistor in a TO-92L package, manufactured by JSMSEMI. It supports a breakdown voltage of 80V and continuous collector current of 1A. It is widely used in switching and amplification circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | JSMSEMI | Original Manufacturer |
| Package | TO-92L | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| Category | Single | Configuration |
| Collector-Emitter Voltage (VCEO) | 80V | Max breakdown voltage |
| Collector Current (Ic) | 1A | Max current handling |
| Power Dissipation (Pd) | 750mW | Max thermal limit |
| DC Current Gain (hFE) | 320 | Base signal amplification ratio |
| Transition Frequency (fT) | 140MHz | Max operating frequency |
| Saturation Voltage (VCEsat) | - | Voltage drop when fully ON |
| Emitter-Base Voltage (Vebo) | - | Max emitter-base breakdown |
| Collector Cutoff Current | 10uA | Leakage current when OFF |
| Operating Temp | -55℃~+150℃ | Safe junction temperature range |