2SB1386 Transistor Datasheet & Specifications

PNP BJT | LGE

PNPSOT-89General Purpose
VCEO
20V
Ic Max
5A
Pd Max
500mW
Gain
230
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Quick Reference

The 2SB1386 is a PNP bipolar transistor in a SOT-89 package. This datasheet provides complete specifications including 20V breakdown voltage and 5A continuous collector current. Download the 2SB1386 datasheet PDF below for detailed pinout diagrams and application circuits.

Technical Specifications

ParameterValueDescription
ManufacturerLGEOriginal Manufacturer
PackageSOT-89Physical mounting
VCEO20VBreakdown voltage
IC Max5ACollector current
Pd Max500mWPower dissipation
Gain230DC current gain
Frequency-Transition speed
VCEsat-Saturation voltage
Vebo120MHzEmitter-Base voltage
Temp-55℃~+150℃Operating temp

Direct Replacements & Alternatives

PartTypePackageVCEOIcPd
BC869PNPSOT-89-3L20V1A500mW
PXT8550PNPSOT-8925V1.5A625mW
PXT8550PNPSOT-8925V1.5A625mW
BC869-25PNPSOT-8920V1A500mW
PXT8550PNPSOT-8925V1.5A625mW
2SB1386T100RPNPSOT-8920V5A500mW
PXT8550PNPSOT-8925V1.5A625mW
PXT8550-JSMPNPSOT-8925V1.5A500mW
2SB798PNPSOT-8925V1A1W
2SB799PNPSOT-8925V1.5A1W
View all SOT-89 PNP Transistors ›