2SB1201S-TL-E Transistor Datasheet & Specifications
PNPTO-252General Purpose
VCEO
-
Ic Max
50V
Pd Max
2A
Gain
-55℃~+150℃
Quick Reference
The 2SB1201S-TL-E is a PNP bipolar transistor in a TO-252 package. This datasheet provides complete specifications including - breakdown voltage and 50V continuous collector current. Download the 2SB1201S-TL-E datasheet PDF below for detailed pinout diagrams and application circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | onsemi | Original Manufacturer |
| Package | TO-252 | Physical mounting |
| VCEO | - | Breakdown voltage |
| IC Max | 50V | Collector current |
| Pd Max | 2A | Power dissipation |
| Gain | -55℃~+150℃ | DC current gain |
| Frequency | - | Transition speed |
| VCEsat | - | Saturation voltage |
| Vebo | 150MHz | Emitter-Base voltage |
| Temp | 800mW | Operating temp |
Direct Replacements & Alternatives
| Part | Type | Package | VCEO | Ic | Pd |
|---|