2SB1198-RQ Datasheet & Equivalents

PNP SOT-23 General Purpose YANGJIE
VCEO
80V
Ic Max
500mA
Pd Max
200mW
hFE Gain
180

Quick Reference

The 2SB1198-RQ is a PNP bipolar junction transistor in a SOT-23 package, manufactured by YANGJIE. It supports a breakdown voltage of 80V and continuous collector current of 500mA. It is widely used in switching and amplification circuits.

Technical Specifications

ParameterValueDescription
ManufacturerYANGJIEOriginal Manufacturer
PackageSOT-23Physical mounting
Transistor TypeBJTBipolar Junction Transistor
CategorySingleConfiguration
Collector-Emitter Voltage (VCEO)80VMax breakdown voltage
Collector Current (Ic)500mAMax current handling
Power Dissipation (Pd)200mWMax thermal limit
DC Current Gain (hFE)180Base signal amplification ratio
Transition Frequency (fT)180MHzMax operating frequency
Saturation Voltage (VCEsat)500mVVoltage drop when fully ON
Emitter-Base Voltage (Vebo)5VMax emitter-base breakdown
Collector Cutoff Current500nALeakage current when OFF
Operating Temp-55โ„ƒ~+150โ„ƒSafe junction temperature range

Equivalent Transistors & Alternatives

PartTypePackageVCEOIChFEPdManufacturer / Datasheet
2SB1198KT146R PNP SOT-23 80V 500mA 120 200mW
LMBTA56LT1G PNP SOT-23 80V 500mA 100 225mW
MMBTA56(RANGE:100-400) PNP SOT-23 80V 500mA 100 225mW
MMBTA56-7-F PNP SOT-23 80V 500mA 100 350mW
MMBTA56G-AE3-R PNP SOT-23 80V 500mA 100 350mW
MMBTA56LT1G PNP SOT-23 80V 500mA 100 225mW
MMBTA56LT3G PNP SOT-23 80V 500mA 100 225mW
MMBTA56Q-13-F PNP SOT-23 80V 500mA 100 350mW
MMBTA56_R1_00001 PNP SOT-23 80V 500mA 100 225mW
SMMBTA56LT1G PNP SOT-23 80V 500mA 100 300mW
SMMBTA56LT3G PNP SOT-23 80V 500mA 100 300mW
MMBTA56 PNP SOT-23 80V 500mA 100 225mW
MMBTA56 PNP SOT-23 80V 500mA 100 225mW
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MMBTA56 PNP SOT-23 80V 500mA 100 350mW
MMBTA56 PNP SOT-23 80V 500mA 100 300mW
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MMBTA56 PNP SOT-23 80V 500mA 100 300mW
CMPTA56-HXY PNP SOT-23 80V 500mA 400 225mW
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FMMTA56TA-HXY PNP SOT-23 80V 500mA 400 225mW
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PMBTA56-HXY PNP SOT-23 80V 500mA 400 225mW
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SMMBTA56LT3G-HXY PNP SOT-23 80V 500mA 400 225mW
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