2SB1189T100R Transistor Datasheet & Specifications
PNPSC-62General Purpose
VCEO
80V
Ic Max
700mA
Pd Max
2W
Gain
180
Quick Reference
The 2SB1189T100R is a PNP bipolar transistor in a SC-62 package. This datasheet provides complete specifications including 80V breakdown voltage and 700mA continuous collector current. Download the 2SB1189T100R datasheet PDF below for detailed pinout diagrams and application circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | ROHM | Original Manufacturer |
| Package | SC-62 | Physical mounting |
| VCEO | 80V | Breakdown voltage |
| IC Max | 700mA | Collector current |
| Pd Max | 2W | Power dissipation |
| Gain | 180 | DC current gain |
| Frequency | 100MHz | Transition speed |
| VCEsat | 200mV | Saturation voltage |
| Vebo | 5V | Emitter-Base voltage |
| Temp | -55℃~+150℃ | Operating temp |
Direct Replacements & Alternatives
| Part | Type | Package | VCEO | Ic | Pd |
|---|