2SB1188T100Q Transistor Datasheet & Specifications
PNPTO-243AAGeneral Purpose
VCEO
32V
Ic Max
2A
Pd Max
500mW
Gain
120
Quick Reference
The 2SB1188T100Q is a PNP bipolar transistor in a TO-243AA package. This datasheet provides complete specifications including 32V breakdown voltage and 2A continuous collector current. Download the 2SB1188T100Q datasheet PDF below for detailed pinout diagrams and application circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | ROHM | Original Manufacturer |
| Package | TO-243AA | Physical mounting |
| VCEO | 32V | Breakdown voltage |
| IC Max | 2A | Collector current |
| Pd Max | 500mW | Power dissipation |
| Gain | 120 | DC current gain |
| Frequency | 100MHz | Transition speed |
| VCEsat | 500mV | Saturation voltage |
| Vebo | 5V | Emitter-Base voltage |
| Temp | -55℃~+150℃ | Operating temp |
Direct Replacements & Alternatives
| Part | Type | Package | VCEO | Ic | Pd |
|---|---|---|---|---|---|
| 2SAR542PFRAT100 | PNP | TO-243AA | 30V | 5A | 2W |