2SB1132 BAR Transistor Datasheet & Specifications

PNP BJT | MSKSEMI

PNPSOT-89General Purpose
VCEO
32V
Ic Max
1A
Pd Max
500mW
Gain
390

Quick Reference

The 2SB1132 BAR is a PNP bipolar transistor in a SOT-89 package. This datasheet provides complete specifications including 32V breakdown voltage and 1A continuous collector current. Download the 2SB1132 BAR datasheet PDF below for detailed pinout diagrams and application circuits.

Technical Specifications

ParameterValueDescription
ManufacturerMSKSEMIOriginal Manufacturer
PackageSOT-89Physical mounting
VCEO32VBreakdown voltage
IC Max1ACollector current
Pd Max500mWPower dissipation
Gain390DC current gain
Frequency150MHzTransition speed
VCEsat500mVSaturation voltage
Vebo5VEmitter-Base voltage
Temp-Operating temp

Direct Replacements & Alternatives

PartTypePackageVCEOIcPd
2DB1132R-13PNPSOT-8932V1A1.5W
FCX591ATAPNPSOT-8940V1A1W
ZXTP2008ZTAPNPSOT-8930V5.5A12W
ZX5T3ZTAPNPSOT-8940V5.5A3W
FCX1151ATAPNPSOT-8940V3A2W
DSS5540X-13PNPSOT-8940V4A900mW
ZXTP25040DZTAPNPSOT-8940V3A1.1W
2SB1188-Q-TPPNPSOT-8932V2A500mW
2SAR542PT100PNPSOT-8930V5A2W
B772-JSMPNPSOT-8930V3A500mW