2SA812 Datasheet & Equivalents

PNP SOT-23 General Purpose R+O
VCEO
50V
Ic Max
100mA
Pd Max
200mW
hFE Gain
90

Quick Reference

The 2SA812 is a PNP bipolar junction transistor in a SOT-23 package, manufactured by R+O. It supports a breakdown voltage of 50V and continuous collector current of 100mA. It is widely used in switching and amplification circuits.

Technical Specifications

ParameterValueDescription
ManufacturerR+OOriginal Manufacturer
PackageSOT-23Physical mounting
Transistor TypeBJTBipolar Junction Transistor
CategorySingleConfiguration
Collector-Emitter Voltage (VCEO)50VMax breakdown voltage
Collector Current (Ic)100mAMax current handling
Power Dissipation (Pd)200mWMax thermal limit
DC Current Gain (hFE)90Base signal amplification ratio
Transition Frequency (fT)180MHzMax operating frequency
Saturation Voltage (VCEsat)300mVVoltage drop when fully ON
Emitter-Base Voltage (Vebo)5VMax emitter-base breakdown
Collector Cutoff Current100nALeakage current when OFF
Operating Temp-55โ„ƒ~+150โ„ƒSafe junction temperature range

Equivalent Transistors & Alternatives

PartTypePackageVCEOIChFEPdManufacturer / Datasheet
2SA812(RANGE:300-400) PNP SOT-23 50V 100mA 90 200mW
2SA1162Y PNP SOT-23 50V 150mA 70 150mW
KTA1504S-Y-RTK/P PNP SOT-23 50V 150mA 70 150mW
2SA1037AKT146R PNP SOT-23 50V 150mA 120 200mW
2SA1037AKT146S PNP SOT-23 50V 150mA 120 200mW
A1015 PNP SOT-23 50V 150mA 120 200mW
A733 PNP SOT-23 50V 150mA 120 200mW
A1015 PNP SOT-23 50V 150mA 130 200mW
A1015(RANGE:200-400) PNP SOT-23 50V 150mA 200 200mW
L2SA812SLT1G PNP SOT-23 50V 150mA 270 200mW
2SA1162-6AF PNP SOT-23 50V 150mA 400 150mW
2SA1015 PNP SOT-23 50V 150mA 400 200mW
2SA1015 PNP SOT-23 50V 150mA 400 200mW
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A1015 PNP SOT-23 50V 150mA 400 200mW
A1015 PNP SOT-23 50V 150mA 400 200mW
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2SA1037-6AF PNP SOT-23 50V 150mA 560 200mW
H2SA1037AKT146R PNP SOT-23 50V 150mA 560 400mW
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KA1980SCG PNP SOT-23 50V 150mA 700 350mW
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BC856ALT1G PNP SOT-23 65V 100mA 90 225mW
BC856BLT1G PNP SOT-23 65V 100mA 90 225mW