2SA1163-GR,LF Transistor Datasheet & Specifications

PNP BJT | TOSHIBA

PNPTO-236-3(SOT-23-3)General Purpose
VCEO
120V
Ic Max
100mA
Pd Max
200mW
Gain
700
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Quick Reference

The 2SA1163-GR,LF is a PNP bipolar transistor in a TO-236-3(SOT-23-3) package. This datasheet provides complete specifications including 120V breakdown voltage and 100mA continuous collector current. Download the 2SA1163-GR,LF datasheet PDF below for detailed pinout diagrams and application circuits.

Technical Specifications

ParameterValueDescription
ManufacturerTOSHIBAOriginal Manufacturer
PackageTO-236-3(SOT-23-3)Physical mounting
VCEO120VBreakdown voltage
IC Max100mACollector current
Pd Max200mWPower dissipation
Gain700DC current gain
Frequency100MHzTransition speed
VCEsat300mVSaturation voltage
Vebo5VEmitter-Base voltage
Temp-55℃~+125℃Operating temp

Direct Replacements & Alternatives

PartTypePackageVCEOIcPd
View all TO-236-3(SOT-23-3) PNP Transistors ›