2SA1141 Datasheet & Equivalents
PNP
TO-3P
High Power
SPTECH
VCEO
115V
Ic Max
10A
Pd Max
100W
hFE Gain
200
Quick Reference
The 2SA1141 is a PNP bipolar junction transistor in a TO-3P package, manufactured by SPTECH. It supports a breakdown voltage of 115V and continuous collector current of 10A. It is widely used in switching and amplification circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | SPTECH | Original Manufacturer |
| Package | TO-3P | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| Polarity | PNP | Configuration |
| Collector-Emitter Voltage (VCEO) | 115V | Max breakdown voltage |
| Collector Current (Ic) | 10A | Max current handling |
| Power Dissipation (Pd) | 100W | Max thermal limit |
| DC Current Gain (hFE) | 200 | Base signal amplification ratio |
| Transition Frequency (fT) | 90MHz | Max operating frequency |
| Saturation Voltage (VCEsat) | 1.5V | Voltage drop when fully ON |
| Emitter-Base Voltage (Vebo) | 5V | Max emitter-base breakdown |
| Collector Cutoff Current | 50uA | Leakage current when OFF |
| Operating Temp | - | Safe junction temperature range |