2N7002W MOSFET Datasheet & Specifications

N-Channel SOT-323 Logic-Level R+O
Vds Max
60V
Id Max
115mA
Rds(on)
900mΩ@10V
Vgs(th)
1.6V

Quick Reference

The 2N7002W is an N-Channel MOSFET in a SOT-323 package, manufactured by R+O. It supports a drain-source breakdown voltage of 60V and a continuous drain current of 115mA. It is widely used in switching and power applications.

Technical Specifications

ParameterValueDescription
ManufacturerR+OOriginal Manufacturer
PackageSOT-323Physical mounting
Transistor TypeMOSFETMetal-Oxide-Semiconductor FET
CategorySingleConfiguration
Drain-Source Voltage (Vds)60VMax breakdown voltage
Continuous Drain Current (Id)115mAMax current handling
Power Dissipation (Pd)200mWMax thermal limit
On-Resistance (Rds(on))900mΩ@10VResistance when turned fully on
Gate Threshold (Vgs(th))1.6VVoltage required to turn on
Gate Charge (Qg)-Switching energy
Input Capacitance (Ciss)50pFInternal gate capacitance
Output Capacitance (Coss)25pFInternal output capacitance
Operating Temp-55℃~+150℃Safe junction temperature range

Equivalent MOSFETs & Alternatives

PartTypePackageVdsIdRds(on)Vgs(th)Manufacturer / Datasheet
2N7002W-7-F-ES N-Channel SOT-323 60V 300mA 1.85Ω@10V
2.05Ω@4.5V
1.6V
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2N7002KW N-Channel SOT-323 60V 300mA 1.85Ω@10V 1.6V
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