2N7002DW MOSFET Datasheet & Specifications
N-Channel
SOT-363
Logic-Level
JSCJ
Vds Max
60V
Id Max
115mA
Rds(on)
7Ω@5V
Vgs(th)
2.5V
Quick Reference
The 2N7002DW is an N-Channel MOSFET in a SOT-363 package, manufactured by JSCJ. It supports a drain-source breakdown voltage of 60V and a continuous drain current of 115mA. It is widely used in switching and power applications.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | JSCJ | Original Manufacturer |
| Package | SOT-363 | Physical mounting |
| Transistor Type | MOSFET | Metal-Oxide-Semiconductor FET |
| Category | Single | Configuration |
| Drain-Source Voltage (Vds) | 60V | Max breakdown voltage |
| Continuous Drain Current (Id) | 115mA | Max current handling |
| Power Dissipation (Pd) | 150mW | Max thermal limit |
| On-Resistance (Rds(on)) | 7Ω@5V | Resistance when turned fully on |
| Gate Threshold (Vgs(th)) | 2.5V | Voltage required to turn on |
| Gate Charge (Qg) | - | Switching energy |
| Input Capacitance (Ciss) | 50pF | Internal gate capacitance |
| Output Capacitance (Coss) | 25pF | Internal output capacitance |
| Operating Temp | -55℃~+150℃ | Safe junction temperature range |