2N6718G-B-AB3-R Transistor Datasheet & Specifications

NPN BJT | UTC

NPNSOT-89-3General Purpose
VCEO
100V
Ic Max
1A
Pd Max
1W
Gain
-

Quick Reference

The 2N6718G-B-AB3-R is a NPN bipolar transistor in a SOT-89-3 package. This datasheet provides complete specifications including 100V breakdown voltage and 1A continuous collector current. Download the 2N6718G-B-AB3-R datasheet PDF below for detailed pinout diagrams and application circuits.

Technical Specifications

ParameterValueDescription
ManufacturerUTCOriginal Manufacturer
PackageSOT-89-3Physical mounting
VCEO100VBreakdown voltage
IC Max1ACollector current
Pd Max1WPower dissipation
Gain-DC current gain
Frequency-Transition speed
VCEsat-Saturation voltage
Vebo50MHzEmitter-Base voltage
Temp-40โ„ƒ~+125โ„ƒOperating temp

Direct Replacements & Alternatives

PartTypePackageVCEOIcPd