2N6517-TA Datasheet & Equivalents
NPN
TO-92
General Purpose
JSCJ
VCEO
350V
Ic Max
500mA
Pd Max
625mW
hFE Gain
30
Quick Reference
The 2N6517-TA is a NPN bipolar junction transistor in a TO-92 package, manufactured by JSCJ. It supports a breakdown voltage of 350V and continuous collector current of 500mA. It is widely used in switching and amplification circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | JSCJ | Original Manufacturer |
| Package | TO-92 | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| Category | Single | Configuration |
| Collector-Emitter Voltage (VCEO) | 350V | Max breakdown voltage |
| Collector Current (Ic) | 500mA | Max current handling |
| Power Dissipation (Pd) | 625mW | Max thermal limit |
| DC Current Gain (hFE) | 30 | Base signal amplification ratio |
| Transition Frequency (fT) | 200MHz | Max operating frequency |
| Saturation Voltage (VCEsat) | 1V | Voltage drop when fully ON |
| Emitter-Base Voltage (Vebo) | 6V | Max emitter-base breakdown |
| Collector Cutoff Current | 50nA | Leakage current when OFF |
| Operating Temp | -55℃~+150℃ | Safe junction temperature range |