2N6052 Transistor Datasheet & Specifications

PNP BJT | SPTECH

PNPTO-3General Purpose
VCEO
100V
Ic Max
12A
Pd Max
150W
Gain
18000

Quick Reference

The 2N6052 is a PNP bipolar transistor in a TO-3 package. This datasheet provides complete specifications including 100V breakdown voltage and 12A continuous collector current. Download the 2N6052 datasheet PDF below for detailed pinout diagrams and application circuits.

Technical Specifications

ParameterValueDescription
ManufacturerSPTECHOriginal Manufacturer
PackageTO-3Physical mounting
VCEO100VBreakdown voltage
IC Max12ACollector current
Pd Max150WPower dissipation
Gain18000DC current gain
Frequency-Transition speed
VCEsat3VSaturation voltage
Vebo-Emitter-Base voltage
Temp-65โ„ƒ~+150โ„ƒOperating temp

Direct Replacements & Alternatives

PartTypePackageVCEOIcPd
MJ4502PNPTO-390V30A200W
2N5684PNPTO-380V50A300W
BD318PNPTO-3100V16A200W
2N5884PNPTO-380V25A200W
MJ15016PNPTO-3120V15A180W
MJ11033PNPTO-3120V50A300W