2N5884 Datasheet & Equivalents
PNP
TO-3
High Power
SPTECH
VCEO
80V
Ic Max
25A
Pd Max
200W
hFE Gain
100
Quick Reference
The 2N5884 is a PNP bipolar junction transistor in a TO-3 package, manufactured by SPTECH. It supports a breakdown voltage of 80V and continuous collector current of 25A. It is widely used in switching and amplification circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | SPTECH | Original Manufacturer |
| Package | TO-3 | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| Category | Single | Configuration |
| Collector-Emitter Voltage (VCEO) | 80V | Max breakdown voltage |
| Collector Current (Ic) | 25A | Max current handling |
| Power Dissipation (Pd) | 200W | Max thermal limit |
| DC Current Gain (hFE) | 100 | Base signal amplification ratio |
| Transition Frequency (fT) | 4MHz | Max operating frequency |
| Saturation Voltage (VCEsat) | 4V | Voltage drop when fully ON |
| Emitter-Base Voltage (Vebo) | 5V | Max emitter-base breakdown |
| Collector Cutoff Current | 1mA | Leakage current when OFF |
| Operating Temp | - | Safe junction temperature range |