2N5551TFR Transistor Datasheet & Specifications
NPNTO-92-3LGeneral Purpose
VCEO
160V
Ic Max
600mA
Pd Max
625mW
Gain
80
Quick Reference
The 2N5551TFR is a NPN bipolar transistor in a TO-92-3L package. This datasheet provides complete specifications including 160V breakdown voltage and 600mA continuous collector current. Download the 2N5551TFR datasheet PDF below for detailed pinout diagrams and application circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | onsemi | Original Manufacturer |
| Package | TO-92-3L | Physical mounting |
| VCEO | 160V | Breakdown voltage |
| IC Max | 600mA | Collector current |
| Pd Max | 625mW | Power dissipation |
| Gain | 80 | DC current gain |
| Frequency | 100MHz | Transition speed |
| VCEsat | 200mV | Saturation voltage |
| Vebo | 6V | Emitter-Base voltage |
| Temp | -55℃~+150℃ | Operating temp |
Direct Replacements & Alternatives
| Part | Type | Package | VCEO | Ic | Pd |
|---|---|---|---|---|---|
| KSC1845FTA | NPN | TO-92-3L | 120V | 50mA | 500mW |
| 2N5551TA | NPN | TO-92-3L | 160V | 600mA | 625mW |