2N5401YBU Transistor Datasheet & Specifications

PNP BJT | onsemi

PNPTO-92-3LGeneral Purpose
VCEO
150V
Ic Max
600mA
Pd Max
625mW
Gain
120

Quick Reference

The 2N5401YBU is a PNP bipolar transistor in a TO-92-3L package. This datasheet provides complete specifications including 150V breakdown voltage and 600mA continuous collector current. Download the 2N5401YBU datasheet PDF below for detailed pinout diagrams and application circuits.

Technical Specifications

ParameterValueDescription
ManufactureronsemiOriginal Manufacturer
PackageTO-92-3LPhysical mounting
VCEO150VBreakdown voltage
IC Max600mACollector current
Pd Max625mWPower dissipation
Gain120DC current gain
Frequency400MHzTransition speed
VCEsat200mVSaturation voltage
Vebo5VEmitter-Base voltage
Temp-55โ„ƒ~+150โ„ƒOperating temp

Direct Replacements & Alternatives

PartTypePackageVCEOIcPd
KSA992FATAPNPTO-92-3L120V50mA500mW