2N3906 Datasheet & Equivalents
PNP
TO-92
General Purpose
JSMSEMI
VCEO
40V
Ic Max
200mA
Pd Max
625mW
hFE Gain
100
Quick Reference
The 2N3906 is a PNP bipolar junction transistor in a TO-92 package, manufactured by JSMSEMI. It supports a breakdown voltage of 40V and continuous collector current of 200mA. It is widely used in switching and amplification circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | JSMSEMI | Original Manufacturer |
| Package | TO-92 | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| Category | Single | Configuration |
| Collector-Emitter Voltage (VCEO) | 40V | Max breakdown voltage |
| Collector Current (Ic) | 200mA | Max current handling |
| Power Dissipation (Pd) | 625mW | Max thermal limit |
| DC Current Gain (hFE) | 100 | Base signal amplification ratio |
| Transition Frequency (fT) | 250MHz | Max operating frequency |
| Saturation Voltage (VCEsat) | 400mV | Voltage drop when fully ON |
| Emitter-Base Voltage (Vebo) | 5V | Max emitter-base breakdown |
| Collector Cutoff Current | 100nA | Leakage current when OFF |
| Operating Temp | - | Safe junction temperature range |
Equivalent Transistors & Alternatives
| Part | Type | Package | VCEO | IC | hFE | Pd | Manufacturer / Datasheet |
|---|---|---|---|---|---|---|---|
| 2N3906BU | PNP | TO-92 | 40V | 200mA | 100 | 625mW | onsemi 📄 PDF |
| 2N3906TA | PNP | TO-92 | 40V | 200mA | 100 | 625mW | onsemi 📄 PDF |
| 2N3906TAR | PNP | TO-92 | 40V | 200mA | 60 | 625mW | onsemi 📄 PDF |
| KTA200-Y-AT/P | PNP | TO-92 | 50V | 500mA | 70 | 625mW | KEC 📄 PDF |
| KSP55TA | PNP | TO-92 | 60V | 500mA | 50 | 625mW | onsemi 📄 PDF |
| MPSA56-TA | PNP | TO-92 | 80V | 500mA | 100 | 625mW | JSCJ 📄 PDF |