2N2222AUB Datasheet & Equivalents
NPN
SMD-3P
General Purpose
MICROCHIP
VCEO
50V
Ic Max
800mA
Pd Max
500mW
hFE Gain
100
Quick Reference
The 2N2222AUB is a NPN bipolar junction transistor in a SMD-3P package, manufactured by MICROCHIP. It supports a breakdown voltage of 50V and continuous collector current of 800mA. It is widely used in switching and amplification circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | MICROCHIP | Original Manufacturer |
| Package | SMD-3P | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| Category | Single | Configuration |
| Collector-Emitter Voltage (VCEO) | 50V | Max breakdown voltage |
| Collector Current (Ic) | 800mA | Max current handling |
| Power Dissipation (Pd) | 500mW | Max thermal limit |
| DC Current Gain (hFE) | 100 | Base signal amplification ratio |
| Transition Frequency (fT) | - | Max operating frequency |
| Saturation Voltage (VCEsat) | 1V | Voltage drop when fully ON |
| Emitter-Base Voltage (Vebo) | 6V | Max emitter-base breakdown |
| Collector Cutoff Current | 50nA | Leakage current when OFF |
| Operating Temp | -65℃~+200℃ | Safe junction temperature range |
Equivalent Transistors & Alternatives
| Part | Type | Package | VCEO | IC | hFE | Pd | Manufacturer / Datasheet |
|---|---|---|---|---|---|---|---|
| No exact equivalents found in database. | |||||||