2DD1664P-13 Datasheet & Equivalents

NPN SOT-89 General Purpose DIODES
VCEO
32V
Ic Max
1A
Pd Max
1.5W
hFE Gain
82

Quick Reference

The 2DD1664P-13 is a NPN bipolar junction transistor in a SOT-89 package, manufactured by DIODES. It supports a breakdown voltage of 32V and continuous collector current of 1A. It is widely used in switching and amplification circuits.

Technical Specifications

ParameterValueDescription
ManufacturerDIODESOriginal Manufacturer
PackageSOT-89Physical mounting
Transistor TypeBJTBipolar Junction Transistor
CategorySingleConfiguration
Collector-Emitter Voltage (VCEO)32VMax breakdown voltage
Collector Current (Ic)1AMax current handling
Power Dissipation (Pd)1.5WMax thermal limit
DC Current Gain (hFE)82Base signal amplification ratio
Transition Frequency (fT)280MHzMax operating frequency
Saturation Voltage (VCEsat)120mVVoltage drop when fully ON
Emitter-Base Voltage (Vebo)6VMax emitter-base breakdown
Collector Cutoff Current100nALeakage current when OFF
Operating Temp-55โ„ƒ~+150โ„ƒSafe junction temperature range

Equivalent Transistors & Alternatives

PartTypePackageVCEOIChFEPdManufacturer / Datasheet
2DD1664Q-13 NPN SOT-89 32V 1A 120 1.5W
2DD1664R-13 NPN SOT-89 32V 1A 180 1W
2SD1664R NPN SOT-89 32V 1A 180 1W
2SD1664Q NPN SOT-89 32V 1A 270 500mW
2SD1664G-Q-AB3-R NPN SOT-89 32V 1A 390 1.9W
2SD1898R NPN SOT-89 32V 1A 390 1W
2SD1664 NPN SOT-89 32V 1A 390 500mW
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2SD1664 NPN SOT-89 32V 1A 390 0.5mW
2SD1664-R NPN SOT-89 32V 1A 390 500mW
2SD1664-R NPN SOT-89 32V 1A 390 500mW
2SD1766T100R NPN SOT-89 32V 2A 120 10W
2SD1664-JSM NPN SOT-89 32V 2A 390 500mW
2SD874A NPN SOT-89 40V 1A 50 500mW
FCX491ATA NPN SOT-89 40V 1A 200 1W
BCX54-16(RANGE:100-250) NPN SOT-89 45V 1A 100 500mW
BCX54-16 NPN SOT-89 45V 1A 100 1.3W
BCX54 NPN SOT-89 45V 1A 40 500mW
BCX54(MS) NPN SOT-89 45V 1A 25 500mW
BCX54 NPN SOT-89 45V 1A 25 1.3W
BCX54-16(MS) NPN SOT-89 45V 1A 250 500mW