2SD2701TL Transistor Datasheet & Specifications
NPN
TUMT-3
General Purpose
ROHM
VCEO
30V
Ic Max
1.5A
Pd Max
800mW
hFE Gain
270
Quick Reference
The 2SD2701TL is a NPN bipolar transistor in a TUMT-3 package by ROHM. This datasheet provides complete specifications including 30V breakdown voltage and 1.5A continuous collector current. Download the 2SD2701TL datasheet PDF above for detailed pinout diagrams and application circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | ROHM | Original Manufacturer |
| Package | TUMT-3 | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| VCEO | 30V | Breakdown voltage |
| Ic | 1.5A | Collector current |
| Pd | 800mW | Power dissipation |
| DC Current Gain | 270 | hFE / Beta |
| Frequency | 300MHz | Transition speed (fT) |
| VCEsat | 350mV | Saturation voltage |
| Vebo | 6V | Emitter-Base voltage |
| Cutoff Current | 100nA | Leakage (ICBO) |
| Temp | -55℃~+150℃ | Operating temp |