2SD2114KT146V Transistor Datasheet & Specifications

NPN TO-236-3(SOT-23-3) General Purpose ROHM
VCEO
20V
Ic Max
500mA
Pd Max
200mW
hFE Gain
820

Quick Reference

The 2SD2114KT146V is a NPN bipolar transistor in a TO-236-3(SOT-23-3) package by ROHM. This datasheet provides complete specifications including 20V breakdown voltage and 500mA continuous collector current. Download the 2SD2114KT146V datasheet PDF above for detailed pinout diagrams and application circuits.

Technical Specifications

ParameterValueDescription
ManufacturerROHMOriginal Manufacturer
PackageTO-236-3(SOT-23-3)Physical mounting
Transistor TypeBJTBipolar Junction Transistor
VCEO20VBreakdown voltage
Ic500mACollector current
Pd200mWPower dissipation
DC Current Gain820hFE / Beta
Frequency350MHzTransition speed (fT)
VCEsat400mVSaturation voltage
Vebo12VEmitter-Base voltage
Cutoff Current500nALeakage (ICBO)
Temp-55โ„ƒ~+150โ„ƒOperating temp

Equivalent Transistors & Alternatives

PartTypePackageVCEOIcPd
2SD1781KT146Q NPN TO-236-3(SOT-23-3) 32V 800mA 200mW
2SD1782KT146R NPN TO-236-3(SOT-23-3) 80V 500mA 200mW
2SC2411KT146Q NPN TO-236-3(SOT-23-3) 32V 500mA 200mW
2SD1782KT146Q NPN TO-236-3(SOT-23-3) 80V 500mA 200mW
2SC2411KT146R NPN TO-236-3(SOT-23-3) 32V 500mA 200mW