2SD1816G-S-TN3-R Transistor Datasheet & Specifications
NPN
TO-252-2(DPAK)
High Power
UTC
VCEO
100V
Ic Max
4A
Pd Max
25W
hFE Gain
560
Quick Reference
The 2SD1816G-S-TN3-R is a NPN bipolar transistor in a TO-252-2(DPAK) package by UTC. This datasheet provides complete specifications including 100V breakdown voltage and 4A continuous collector current. Download the 2SD1816G-S-TN3-R datasheet PDF above for detailed pinout diagrams and application circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | UTC | Original Manufacturer |
| Package | TO-252-2(DPAK) | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| VCEO | 100V | Breakdown voltage |
| Ic | 4A | Collector current |
| Pd | 25W | Power dissipation |
| DC Current Gain | 560 | hFE / Beta |
| Frequency | 180MHz | Transition speed (fT) |
| VCEsat | 400mV | Saturation voltage |
| Vebo | 6V | Emitter-Base voltage |
| Cutoff Current | 1uA | Leakage (ICBO) |
| Temp | - | Operating temp |
Equivalent Transistors & Alternatives
| Part | Type | Package | VCEO | Ic | Pd |
|---|---|---|---|---|---|
| MJD122T4 | NPN | TO-252-2(DPAK) | 100V | 8A | 20W |