2SD1816G-R-TF3-T Transistor Datasheet & Specifications
NPN
TO-220F
General Purpose
UTC
VCEO
100V
Ic Max
4A
Pd Max
2W
hFE Gain
560
Quick Reference
The 2SD1816G-R-TF3-T is a NPN bipolar transistor in a TO-220F package by UTC. This datasheet provides complete specifications including 100V breakdown voltage and 4A continuous collector current. Download the 2SD1816G-R-TF3-T datasheet PDF above for detailed pinout diagrams and application circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | UTC | Original Manufacturer |
| Package | TO-220F | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| VCEO | 100V | Breakdown voltage |
| Ic | 4A | Collector current |
| Pd | 2W | Power dissipation |
| DC Current Gain | 560 | hFE / Beta |
| Frequency | 180MHz | Transition speed (fT) |
| VCEsat | 400mV | Saturation voltage |
| Vebo | 6V | Emitter-Base voltage |
| Cutoff Current | 1uA | Leakage (ICBO) |
| Temp | - | Operating temp |
Equivalent Transistors & Alternatives
| Part | Type | Package | VCEO | Ic | Pd |
|---|---|---|---|---|---|
| F13005-1 | NPN | TO-220F | 400V | 5A | 40W |