2SD1616A Transistor Datasheet & Specifications

NPN TO-92 General Purpose LGE
VCEO
60V
Ic Max
1A
Pd Max
750mW
hFE Gain
600

Quick Reference

The 2SD1616A is a NPN bipolar transistor in a TO-92 package by LGE. This datasheet provides complete specifications including 60V breakdown voltage and 1A continuous collector current. Download the 2SD1616A datasheet PDF above for detailed pinout diagrams and application circuits.

Technical Specifications

ParameterValueDescription
ManufacturerLGEOriginal Manufacturer
PackageTO-92Physical mounting
Transistor TypeBJTBipolar Junction Transistor
VCEO60VBreakdown voltage
Ic1ACollector current
Pd750mWPower dissipation
DC Current Gain600hFE / Beta
Frequency100MHzTransition speed (fT)
VCEsat300mVSaturation voltage
Vebo6VEmitter-Base voltage
Cutoff Current100nALeakage (ICBO)
Temp-Operating temp

Equivalent Transistors & Alternatives

PartTypePackageVCEOIcPd
2SD1616A(RANGE:200-400) NPN TO-92 60V 1A 750mW
ZTX455 NPN TO-92 140V 1A 1W
ZTX853 NPN TO-92 100V 4A 1.2W
ZTX1053A NPN TO-92 75V 3A 1W
ZTX451 NPN TO-92 60V 1A 1W
3DD13003B-TA NPN TO-92 400V 1.5A 900mW
KSD1616A NPN TO-92 60V 1A 750mW
2SC2383-Y NPN TO-92 160V 1A 700mW
2SD1857L-Q-T92-B NPN TO-92 120V 2A 625mW
ZTX605 NPN TO-92 120V 1A 1W