2SD1383KT146B Transistor Datasheet & Specifications

NPN TO-236-3(SOT-23-3) General Purpose ROHM
VCEO
32V
Ic Max
300mA
Pd Max
200mW
hFE Gain
5000

Quick Reference

The 2SD1383KT146B is a NPN bipolar transistor in a TO-236-3(SOT-23-3) package by ROHM. This datasheet provides complete specifications including 32V breakdown voltage and 300mA continuous collector current. Download the 2SD1383KT146B datasheet PDF above for detailed pinout diagrams and application circuits.

Technical Specifications

ParameterValueDescription
ManufacturerROHMOriginal Manufacturer
PackageTO-236-3(SOT-23-3)Physical mounting
Transistor TypeBJTBipolar Junction Transistor
VCEO32VBreakdown voltage
Ic300mACollector current
Pd200mWPower dissipation
DC Current Gain5000hFE / Beta
Frequency250MHzTransition speed (fT)
VCEsat1.5VSaturation voltage
Vebo-Emitter-Base voltage
Cutoff Current1uALeakage (ICBO)
Temp-Operating temp

Equivalent Transistors & Alternatives

PartTypePackageVCEOIcPd
2SD1781KT146Q NPN TO-236-3(SOT-23-3) 32V 800mA 200mW
2SD1782KT146R NPN TO-236-3(SOT-23-3) 80V 500mA 200mW
2SC2411KT146Q NPN TO-236-3(SOT-23-3) 32V 500mA 200mW
2SD1782KT146Q NPN TO-236-3(SOT-23-3) 80V 500mA 200mW
2SC2411KT146R NPN TO-236-3(SOT-23-3) 32V 500mA 200mW