2SCR502U3HZGT106 Transistor Datasheet & Specifications
NPN
SC-70
General Purpose
ROHM
VCEO
30V
Ic Max
500mA
Pd Max
200mW
hFE Gain
200
Quick Reference
The 2SCR502U3HZGT106 is a NPN bipolar transistor in a SC-70 package by ROHM. This datasheet provides complete specifications including 30V breakdown voltage and 500mA continuous collector current. Download the 2SCR502U3HZGT106 datasheet PDF above for detailed pinout diagrams and application circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | ROHM | Original Manufacturer |
| Package | SC-70 | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| VCEO | 30V | Breakdown voltage |
| Ic | 500mA | Collector current |
| Pd | 200mW | Power dissipation |
| DC Current Gain | 200 | hFE / Beta |
| Frequency | 360MHz | Transition speed (fT) |
| VCEsat | - | Saturation voltage |
| Vebo | - | Emitter-Base voltage |
| Cutoff Current | - | Leakage (ICBO) |
| Temp | -55℃~+150℃ | Operating temp |
Equivalent Transistors & Alternatives
| Part | Type | Package | VCEO | Ic | Pd |
|---|---|---|---|---|---|
| BC817-40W-QX | NPN | SC-70 | 45V | 500mA | 290mW |
| PMST4401,135 | NPN | SC-70 | 40V | 600mA | 200mW |