2SC5866TLQ Transistor Datasheet & Specifications
NPN
SC-96
General Purpose
ROHM
VCEO
60V
Ic Max
2A
Pd Max
500mW
hFE Gain
390
Quick Reference
The 2SC5866TLQ is a NPN bipolar transistor in a SC-96 package by ROHM. This datasheet provides complete specifications including 60V breakdown voltage and 2A continuous collector current. Download the 2SC5866TLQ datasheet PDF above for detailed pinout diagrams and application circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | ROHM | Original Manufacturer |
| Package | SC-96 | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| VCEO | 60V | Breakdown voltage |
| Ic | 2A | Collector current |
| Pd | 500mW | Power dissipation |
| DC Current Gain | 390 | hFE / Beta |
| Frequency | 200MHz | Transition speed (fT) |
| VCEsat | 500mV | Saturation voltage |
| Vebo | 6V | Emitter-Base voltage |
| Cutoff Current | 1uA | Leakage (ICBO) |
| Temp | -55โ~+150โ | Operating temp |