2SC5692(TE85L,F) Transistor Datasheet & Specifications
NPN
2-3S1C
General Purpose
TOSHIBA
VCEO
50V
Ic Max
2.5A
Pd Max
1W
hFE Gain
400
Quick Reference
The 2SC5692(TE85L,F) is a NPN bipolar transistor in a 2-3S1C package by TOSHIBA. This datasheet provides complete specifications including 50V breakdown voltage and 2.5A continuous collector current. Download the 2SC5692(TE85L,F) datasheet PDF above for detailed pinout diagrams and application circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | TOSHIBA | Original Manufacturer |
| Package | 2-3S1C | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| VCEO | 50V | Breakdown voltage |
| Ic | 2.5A | Collector current |
| Pd | 1W | Power dissipation |
| DC Current Gain | 400 | hFE / Beta |
| Frequency | - | Transition speed (fT) |
| VCEsat | 140mV | Saturation voltage |
| Vebo | 7V | Emitter-Base voltage |
| Cutoff Current | 100nA | Leakage (ICBO) |
| Temp | -55℃~+150℃ | Operating temp |