2SC5585TL Transistor Datasheet & Specifications
NPN
SOT-416
General Purpose
ROHM
VCEO
12V
Ic Max
500mA
Pd Max
150mW
hFE Gain
270
Quick Reference
The 2SC5585TL is a NPN bipolar transistor in a SOT-416 package by ROHM. This datasheet provides complete specifications including 12V breakdown voltage and 500mA continuous collector current. Download the 2SC5585TL datasheet PDF above for detailed pinout diagrams and application circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | ROHM | Original Manufacturer |
| Package | SOT-416 | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| VCEO | 12V | Breakdown voltage |
| Ic | 500mA | Collector current |
| Pd | 150mW | Power dissipation |
| DC Current Gain | 270 | hFE / Beta |
| Frequency | 320MHz | Transition speed (fT) |
| VCEsat | - | Saturation voltage |
| Vebo | - | Emitter-Base voltage |
| Cutoff Current | - | Leakage (ICBO) |
| Temp | -55℃~+150℃ | Operating temp |