2SC5570 Transistor Datasheet & Specifications
NPN
TO-3PL
High Power
SPTECH
VCEO
800V
Ic Max
28A
Pd Max
220W
hFE Gain
8
Quick Reference
The 2SC5570 is a NPN bipolar transistor in a TO-3PL package by SPTECH. This datasheet provides complete specifications including 800V breakdown voltage and 28A continuous collector current. Download the 2SC5570 datasheet PDF above for detailed pinout diagrams and application circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | SPTECH | Original Manufacturer |
| Package | TO-3PL | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| VCEO | 800V | Breakdown voltage |
| Ic | 28A | Collector current |
| Pd | 220W | Power dissipation |
| DC Current Gain | 8 | hFE / Beta |
| Frequency | - | Transition speed (fT) |
| VCEsat | 5V | Saturation voltage |
| Vebo | 6V | Emitter-Base voltage |
| Cutoff Current | 10uA | Leakage (ICBO) |
| Temp | - | Operating temp |