2SC4617E3HZGTLQ Transistor Datasheet & Specifications
NPN
-
General Purpose
ROHM
VCEO
50V
Ic Max
150mA
Pd Max
150mW
hFE Gain
-
Quick Reference
The 2SC4617E3HZGTLQ is a NPN bipolar transistor in a - package by ROHM. This datasheet provides complete specifications including 50V breakdown voltage and 150mA continuous collector current. Download the 2SC4617E3HZGTLQ datasheet PDF above for detailed pinout diagrams and application circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | ROHM | Original Manufacturer |
| Package | - | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| VCEO | 50V | Breakdown voltage |
| Ic | 150mA | Collector current |
| Pd | 150mW | Power dissipation |
| DC Current Gain | - | hFE / Beta |
| Frequency | - | Transition speed (fT) |
| VCEsat | 400mV | Saturation voltage |
| Vebo | 7V | Emitter-Base voltage |
| Cutoff Current | 100nA | Leakage (ICBO) |
| Temp | - | Operating temp |