2SC4102T106S Transistor Datasheet & Specifications

NPN - General Purpose ROHM
VCEO
120V
Ic Max
50mA
Pd Max
200mW
hFE Gain
180

Quick Reference

The 2SC4102T106S is a NPN bipolar transistor in a - package by ROHM. This datasheet provides complete specifications including 120V breakdown voltage and 50mA continuous collector current. Download the 2SC4102T106S datasheet PDF above for detailed pinout diagrams and application circuits.

Technical Specifications

ParameterValueDescription
ManufacturerROHMOriginal Manufacturer
Package-Physical mounting
Transistor TypeBJTBipolar Junction Transistor
VCEO120VBreakdown voltage
Ic50mACollector current
Pd200mWPower dissipation
DC Current Gain180hFE / Beta
Frequency140MHzTransition speed (fT)
VCEsat500mVSaturation voltage
Vebo-Emitter-Base voltage
Cutoff Current500nALeakage (ICBO)
Temp-Operating temp

Equivalent Transistors & Alternatives

Sorry, we do not have any direct replacements for this part in our database at this time.