2SC2712-Y(TE85L,F) Transistor Datasheet & Specifications
NPN
SOT-346
General Purpose
TOSHIBA
VCEO
50V
Ic Max
150mA
Pd Max
200mW
hFE Gain
70
Quick Reference
The 2SC2712-Y(TE85L,F) is a NPN bipolar transistor in a SOT-346 package by TOSHIBA. This datasheet provides complete specifications including 50V breakdown voltage and 150mA continuous collector current. Download the 2SC2712-Y(TE85L,F) datasheet PDF above for detailed pinout diagrams and application circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | TOSHIBA | Original Manufacturer |
| Package | SOT-346 | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| VCEO | 50V | Breakdown voltage |
| Ic | 150mA | Collector current |
| Pd | 200mW | Power dissipation |
| DC Current Gain | 70 | hFE / Beta |
| Frequency | 80MHz | Transition speed (fT) |
| VCEsat | - | Saturation voltage |
| Vebo | - | Emitter-Base voltage |
| Cutoff Current | - | Leakage (ICBO) |
| Temp | -55℃~+150℃ | Operating temp |