2SC2712-GR,LXHF Transistor Datasheet & Specifications

NPN TO-236-3(SOT-23-3) General Purpose TOSHIBA
VCEO
50V
Ic Max
150mA
Pd Max
200mW
hFE Gain
200

Quick Reference

The 2SC2712-GR,LXHF is a NPN bipolar transistor in a TO-236-3(SOT-23-3) package by TOSHIBA. This datasheet provides complete specifications including 50V breakdown voltage and 150mA continuous collector current. Download the 2SC2712-GR,LXHF datasheet PDF above for detailed pinout diagrams and application circuits.

Technical Specifications

ParameterValueDescription
ManufacturerTOSHIBAOriginal Manufacturer
PackageTO-236-3(SOT-23-3)Physical mounting
Transistor TypeBJTBipolar Junction Transistor
VCEO50VBreakdown voltage
Ic150mACollector current
Pd200mWPower dissipation
DC Current Gain200hFE / Beta
Frequency80MHzTransition speed (fT)
VCEsat250mVSaturation voltage
Vebo5VEmitter-Base voltage
Cutoff Current100nALeakage (ICBO)
Temp-Operating temp

Equivalent Transistors & Alternatives

PartTypePackageVCEOIcPd
2SC2412KT146R NPN TO-236-3(SOT-23-3) 50V 150mA 200mW
2SD1782KT146R NPN TO-236-3(SOT-23-3) 80V 500mA 200mW
2SD2226KT146V NPN TO-236-3(SOT-23-3) 50V 150mA 200mW
2SD1782KT146Q NPN TO-236-3(SOT-23-3) 80V 500mA 200mW