2SB772 Transistor Datasheet & Specifications
PNP
TO-252-2
High Power
MSKSEMI
VCEO
30V
Ic Max
3A
Pd Max
1.25W
hFE Gain
320
Quick Reference
The 2SB772 is a PNP bipolar transistor in a TO-252-2 package by MSKSEMI. This datasheet provides complete specifications including 30V breakdown voltage and 3A continuous collector current. Download the 2SB772 datasheet PDF above for detailed pinout diagrams and application circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | MSKSEMI | Original Manufacturer |
| Package | TO-252-2 | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| VCEO | 30V | Breakdown voltage |
| Ic | 3A | Collector current |
| Pd | 1.25W | Power dissipation |
| DC Current Gain | 320 | hFE / Beta |
| Frequency | 80MHz | Transition speed (fT) |
| VCEsat | - | Saturation voltage |
| Vebo | - | Emitter-Base voltage |
| Cutoff Current | 1uA | Leakage (ICBO) |
| Temp | -55℃~+150℃ | Operating temp |