2SB647A Transistor Datasheet & Specifications
PNP
TO-92L
General Purpose
JSMSEMI
VCEO
80V
Ic Max
1A
Pd Max
750mW
hFE Gain
320
Quick Reference
The 2SB647A is a PNP bipolar transistor in a TO-92L package by JSMSEMI. This datasheet provides complete specifications including 80V breakdown voltage and 1A continuous collector current. Download the 2SB647A datasheet PDF above for detailed pinout diagrams and application circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | JSMSEMI | Original Manufacturer |
| Package | TO-92L | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| VCEO | 80V | Breakdown voltage |
| Ic | 1A | Collector current |
| Pd | 750mW | Power dissipation |
| DC Current Gain | 320 | hFE / Beta |
| Frequency | 140MHz | Transition speed (fT) |
| VCEsat | - | Saturation voltage |
| Vebo | - | Emitter-Base voltage |
| Cutoff Current | 10uA | Leakage (ICBO) |
| Temp | -55℃~+150℃ | Operating temp |