2SB1695KT146 Transistor Datasheet & Specifications
PNP
TO-236-3(SOT-23-3)
General Purpose
ROHM
VCEO
30V
Ic Max
1.5A
Pd Max
200mW
hFE Gain
270
Quick Reference
The 2SB1695KT146 is a PNP bipolar transistor in a TO-236-3(SOT-23-3) package by ROHM. This datasheet provides complete specifications including 30V breakdown voltage and 1.5A continuous collector current. Download the 2SB1695KT146 datasheet PDF above for detailed pinout diagrams and application circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | ROHM | Original Manufacturer |
| Package | TO-236-3(SOT-23-3) | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| VCEO | 30V | Breakdown voltage |
| Ic | 1.5A | Collector current |
| Pd | 200mW | Power dissipation |
| DC Current Gain | 270 | hFE / Beta |
| Frequency | 280MHz | Transition speed (fT) |
| VCEsat | - | Saturation voltage |
| Vebo | - | Emitter-Base voltage |
| Cutoff Current | 100nA | Leakage (ICBO) |
| Temp | -55℃~+150℃ | Operating temp |