2SB1197-Q Transistor Datasheet & Specifications

PNP SOT-23 General Purpose YANGJIE
VCEO
32V
Ic Max
800mA
Pd Max
200mW
hFE Gain
82

Quick Reference

The 2SB1197-Q is a PNP bipolar transistor in a SOT-23 package by YANGJIE. This datasheet provides complete specifications including 32V breakdown voltage and 800mA continuous collector current. Download the 2SB1197-Q datasheet PDF above for detailed pinout diagrams and application circuits.

Technical Specifications

ParameterValueDescription
ManufacturerYANGJIEOriginal Manufacturer
PackageSOT-23Physical mounting
Transistor TypeBJTBipolar Junction Transistor
VCEO32VBreakdown voltage
Ic800mACollector current
Pd200mWPower dissipation
DC Current Gain82hFE / Beta
Frequency100MHzTransition speed (fT)
VCEsat-Saturation voltage
Vebo-Emitter-Base voltage
Cutoff Current-Leakage (ICBO)
Temp-55โ„ƒ~+150โ„ƒOperating temp

Equivalent Transistors & Alternatives

PartTypePackageVCEOIcPd
LBSS5240LT1G PNP SOT-23 40V 2A 300mW
ZXTP2025FTA PNP SOT-23 50V 5A 1.2W
ZXTP25100BFHTA PNP SOT-23 100V 2A 1.25W
FMMT591ATA PNP SOT-23 40V 1A 500mW
PBSS5160T,215 PNP SOT-23 60V 1A 400mW
FMMT591TA PNP SOT-23 60V 1A 500mW
DSS5240TQ-7 PNP SOT-23 40V 2A 730mW
BCW68GLT1G PNP SOT-23 45V 800mA 300mW
FMMT591 PNP SOT-23 60V 1A 500mW
PBSS5140T,215 PNP SOT-23 40V 1A 450mW