2SB1189T100R Transistor Datasheet & Specifications

PNP SC-62 General Purpose ROHM
VCEO
80V
Ic Max
700mA
Pd Max
2W
hFE Gain
180
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Quick Reference

The 2SB1189T100R is a PNP bipolar transistor in a SC-62 package by ROHM. This datasheet provides complete specifications including 80V breakdown voltage and 700mA continuous collector current. Download the 2SB1189T100R datasheet PDF above for detailed pinout diagrams and application circuits.

Technical Specifications

ParameterValueDescription
ManufacturerROHMOriginal Manufacturer
PackageSC-62Physical mounting
Transistor TypeBJTBipolar Junction Transistor
VCEO80VBreakdown voltage
Ic700mACollector current
Pd2WPower dissipation
DC Current Gain180hFE / Beta
Frequency100MHzTransition speed (fT)
VCEsat200mVSaturation voltage
Vebo5VEmitter-Base voltage
Cutoff Current500nALeakage (ICBO)
Temp-55℃~+150℃Operating temp

Equivalent Transistors & Alternatives

Sorry, we do not have any direct replacements for this part in our database at this time.
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