2SB1188T100Q Transistor Datasheet & Specifications
PNP
TO-243AA
General Purpose
ROHM
VCEO
32V
Ic Max
2A
Pd Max
500mW
hFE Gain
120
Quick Reference
The 2SB1188T100Q is a PNP bipolar transistor in a TO-243AA package by ROHM. This datasheet provides complete specifications including 32V breakdown voltage and 2A continuous collector current. Download the 2SB1188T100Q datasheet PDF above for detailed pinout diagrams and application circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | ROHM | Original Manufacturer |
| Package | TO-243AA | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| VCEO | 32V | Breakdown voltage |
| Ic | 2A | Collector current |
| Pd | 500mW | Power dissipation |
| DC Current Gain | 120 | hFE / Beta |
| Frequency | 100MHz | Transition speed (fT) |
| VCEsat | 500mV | Saturation voltage |
| Vebo | 5V | Emitter-Base voltage |
| Cutoff Current | 1uA | Leakage (ICBO) |
| Temp | -55℃~+150℃ | Operating temp |
Equivalent Transistors & Alternatives
| Part | Type | Package | VCEO | Ic | Pd |
|---|---|---|---|---|---|
| 2SA2060(TE12L,F | PNP | TO-243AA | 50V | 2A | 1W |