2SAR523EBTL Transistor Datasheet & Specifications
PNP
SOT-416
General Purpose
ROHM
VCEO
50V
Ic Max
100mA
Pd Max
150mW
hFE Gain
120
Quick Reference
The 2SAR523EBTL is a PNP bipolar transistor in a SOT-416 package by ROHM. This datasheet provides complete specifications including 50V breakdown voltage and 100mA continuous collector current. Download the 2SAR523EBTL datasheet PDF above for detailed pinout diagrams and application circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | ROHM | Original Manufacturer |
| Package | SOT-416 | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| VCEO | 50V | Breakdown voltage |
| Ic | 100mA | Collector current |
| Pd | 150mW | Power dissipation |
| DC Current Gain | 120 | hFE / Beta |
| Frequency | 300MHz | Transition speed (fT) |
| VCEsat | 150mV | Saturation voltage |
| Vebo | 5V | Emitter-Base voltage |
| Cutoff Current | 100nA | Leakage (ICBO) |
| Temp | -55℃~+150℃ | Operating temp |
Equivalent Transistors & Alternatives
| Part | Type | Package | VCEO | Ic | Pd |
|---|---|---|---|---|---|
| 2SA1774TLR | PNP | SOT-416 | 50V | 150mA | 150mW |