2SAR522UBTL Transistor Datasheet & Specifications
PNP
UMT3F
General Purpose
ROHM
VCEO
20V
Ic Max
200mA
Pd Max
200mW
hFE Gain
120
Quick Reference
The 2SAR522UBTL is a PNP bipolar transistor in a UMT3F package by ROHM. This datasheet provides complete specifications including 20V breakdown voltage and 200mA continuous collector current. Download the 2SAR522UBTL datasheet PDF above for detailed pinout diagrams and application circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | ROHM | Original Manufacturer |
| Package | UMT3F | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| VCEO | 20V | Breakdown voltage |
| Ic | 200mA | Collector current |
| Pd | 200mW | Power dissipation |
| DC Current Gain | 120 | hFE / Beta |
| Frequency | 350MHz | Transition speed (fT) |
| VCEsat | 300mV | Saturation voltage |
| Vebo | 5V | Emitter-Base voltage |
| Cutoff Current | 100nA | Leakage (ICBO) |
| Temp | - | Operating temp |