2SA966-TA Transistor Datasheet & Specifications
PNP
TO-92L
General Purpose
JSCJ
VCEO
30V
Ic Max
1.5A
Pd Max
900mW
hFE Gain
100
Quick Reference
The 2SA966-TA is a PNP bipolar transistor in a TO-92L package by JSCJ. This datasheet provides complete specifications including 30V breakdown voltage and 1.5A continuous collector current. Download the 2SA966-TA datasheet PDF above for detailed pinout diagrams and application circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | JSCJ | Original Manufacturer |
| Package | TO-92L | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| VCEO | 30V | Breakdown voltage |
| Ic | 1.5A | Collector current |
| Pd | 900mW | Power dissipation |
| DC Current Gain | 100 | hFE / Beta |
| Frequency | 120MHz | Transition speed (fT) |
| VCEsat | 2V | Saturation voltage |
| Vebo | 5V | Emitter-Base voltage |
| Cutoff Current | 100nA | Leakage (ICBO) |
| Temp | -55โ~+150โ | Operating temp |