2SA2061(TE85L,F) Transistor Datasheet & Specifications

PNP TO-236-3(SOT-23-3) General Purpose TOSHIBA
VCEO
20V
Ic Max
2.5A
Pd Max
625mW
hFE Gain
200
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Quick Reference

The 2SA2061(TE85L,F) is a PNP bipolar transistor in a TO-236-3(SOT-23-3) package by TOSHIBA. This datasheet provides complete specifications including 20V breakdown voltage and 2.5A continuous collector current. Download the 2SA2061(TE85L,F) datasheet PDF above for detailed pinout diagrams and application circuits.

Technical Specifications

ParameterValueDescription
ManufacturerTOSHIBAOriginal Manufacturer
PackageTO-236-3(SOT-23-3)Physical mounting
Transistor TypeBJTBipolar Junction Transistor
VCEO20VBreakdown voltage
Ic2.5ACollector current
Pd625mWPower dissipation
DC Current Gain200hFE / Beta
Frequency-Transition speed (fT)
VCEsat190mVSaturation voltage
Vebo7VEmitter-Base voltage
Cutoff Current100nALeakage (ICBO)
Temp-Operating temp

Equivalent Transistors & Alternatives

Sorry, we do not have any direct replacements for this part in our database at this time.
View all TO-236-3(SOT-23-3) PNP Transistors ›