2SA1943-O(Q) Transistor Datasheet & Specifications
PNP
TO-3PL
High Power
TOSHIBA
VCEO
230V
Ic Max
15A
Pd Max
150W
hFE Gain
80
Quick Reference
The 2SA1943-O(Q) is a PNP bipolar transistor in a TO-3PL package by TOSHIBA. This datasheet provides complete specifications including 230V breakdown voltage and 15A continuous collector current. Download the 2SA1943-O(Q) datasheet PDF above for detailed pinout diagrams and application circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | TOSHIBA | Original Manufacturer |
| Package | TO-3PL | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| VCEO | 230V | Breakdown voltage |
| Ic | 15A | Collector current |
| Pd | 150W | Power dissipation |
| DC Current Gain | 80 | hFE / Beta |
| Frequency | 30MHz | Transition speed (fT) |
| VCEsat | 1.5V | Saturation voltage |
| Vebo | 5V | Emitter-Base voltage |
| Cutoff Current | 5uA | Leakage (ICBO) |
| Temp | - | Operating temp |